Mechanical properties and microstructure of low temperature sintered joints using organic-free silver nanostructured film for die attachment of SiC power electronics
Mechanical properties and microstructure of low temperature sintered joints using organic-free silver nanostructured film for die attachment of SiC power electronics
复制标题
使用无有机物银纳米结构薄膜用于 SiC 电力电子器件芯片连接的低温烧结接头的机械性能和微观结构
DOI：
10.1016/j.msea.2020.139894
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发表时间：
2020-08-19
期刊：
影响因子：
6.4
通讯作者：
Liu, Lei
中科院分区：
文献类型：
--
作者：
Wang, Wengan;Zou, Guisheng;Liu, Lei
采用超快脉冲激光沉积(PLD)技术制备了无有机银纳米结构薄膜(SNF)，并将其应用于碳化硅芯片与陶瓷基片的键合。与含有10%-30%有机物的商用纳米银浆不同，SNF的结合温度仅为180℃，平均剪切强度为18 Mpa，接近标准MIL-STD-883K的3倍。当烧结温度提高到250℃时，烧结点的平均剪切强度达到40 Mpa。它可以通过沉积SNF中颗粒的尺寸分布和聚集方式来调节。讨论了获得合适力学性能和气孔率的烧结机理和策略。
In this work, an organic-free silver nanostructured film (SNF) was applied to bond SiC chips and ceramic substrates, which was fabricated by ultrafast pulsed laser deposition (PLD). Unlike the commercial nano silver paste which contains 10%-30% organics, the bonding temperature of SNF could be reduced to only 180 degrees C, with the average shear strength of 18 MPa, similar to 3 times higher than the standard MIL-STD-883 K. The average shear strength of sintered joints reached 40 MPa when sintering temperature increased to 250 degrees C. The shear strength of joints was strongly dependent on their microstructure, especially the porosity and pore distribution of sintered layer. It can be tuned by size distribution and aggregation mode of particles in deposited SNF. Sintering mechanisms and strategies for obtaining appropriate mechanical property and porosity were discussed.