Photoluminescence from InSb1−xBix alloys at extended wavelengths on InSb
Photoluminescence from InSb1−xBix alloys at extended wavelengths on InSb
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DOI：
10.1063/5.0121657
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发表时间：
2022-11
影响因子：
4
通讯作者：
R. C. White;L. Nordin;A. Muhowski;D. Wasserman;S. R. Bank
中科院分区：
文献类型：
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作者：
R. C. White;L. Nordin;A. Muhowski;D. Wasserman;S. R. Bank
将稀浓度的铋结合到传统的III-V合金中产生带隙能量的显著降低，从而在应变和带隙工程中呈现独特的机会。然而，基质的理想生长条件与取代铋掺入所需条件之间的差异导致这些III-V-Bi合金的材料质量落后于常规III-V半导体的材料质量。InSb 1 −xBix虽然在实验上未被探索，但由于InSb和III-Bi材料的理想生长温度相对相似，因此是高质量III-V-Bi合金的有希望的候选者。通过确定一个高度动力学限制的生长制度，我们证明了高品质的InSb 1 −xBix的分子束外延生长。X射线衍射和卢瑟福背散射光谱（RBS）测量合金的铋浓度，加上光滑的表面形态，通过原子力显微镜测量，建议团结坚持铋纳入铋浓度范围为0.8%至1.5%，通过RBS测量。此外，第一个光致发光是从InSb 1 −xBix中观察到的，并证明在230 K时波长扩展到7.6 μm，铋诱导的带隙减少了1.29 meV/% Bi。此外，我们报告了InSb 1 −xBix的带隙的温度依赖性和观察到的行为与传统的III-V合金一致。研究结果强调了InSb 1 −xBix作为获取长波红外的替代新兴候选物的潜力。
The incorporation of dilute concentrations of bismuth into traditional III–V alloys produces significant reductions in bandgap energy presenting unique opportunities in strain and bandgap engineering. However, the disparity between the ideal growth conditions for the host matrix and those required for substitutional bismuth incorporation has caused the material quality of these III–V–Bi alloys to lag behind that of conventional III–V semiconductors. InSb1−xBix, while experimentally underexplored, is a promising candidate for high-quality III–V–Bi alloys due to the relatively similar ideal growth temperatures for InSb and III–Bi materials. By identifying a highly kinetically limited growth regime, we demonstrate the growth of high-quality InSb1−xBix by molecular beam epitaxy. X-ray diffraction and Rutherford backscattering spectrometry (RBS) measurements of the alloy's bismuth concentration, coupled with smooth surface morphologies as measured by atomic force microscopy, suggest unity-sticking bismuth incorporation for a range of bismuth concentrations from 0.8% to 1.5% as measured by RBS. In addition, the first photoluminescence was observed from InSb1−xBix and demonstrated wavelength extension up to 7.6 μm at 230 K, with a bismuth-induced bandgap reduction of ∼29 meV/% Bi. Furthermore, we report the temperature dependence of the bandgap of InSb1−xBix and observed behavior consistent with that of a traditional III–V alloy. The results presented highlight the potential of InSb1−xBix as an alternative emerging candidate for accessing the longwave-infrared.