The Characteristics of Growth of Films of Zirconium and Hafnium Oxides (ZrO2, HfO2) by Thermal Decomposition of Zirconium and Hafnium β‐Diketonate Complexes in the Presence and Absence of Oxygen
The Characteristics of Growth of Films of Zirconium and Hafnium Oxides (ZrO2, HfO2) by Thermal Decomposition of Zirconium and Hafnium β‐Diketonate Complexes in the Presence and Absence of Oxygen
复制标题
有氧和无氧条件下β-二酮锆铪配合物热分解生长锆铪氧化物（ZrO2、HfO2）薄膜的特性
DOI：
10.1149/1.2129243
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发表时间：
1979
影响因子：
3.9
通讯作者：
S. Patai
中科院分区：
文献类型：
--
作者：
M. Balog;M. Schieber;M. Michman;S. Patai
通过分解这些金属的二酮酸配合物来制备氧化锆和氧化铪薄膜已经在前面的两篇论文中描述过。本文讨论了薄膜生长的各个方面。薄膜生长速率(R)取决于衬底温度，但随着温度的升高，形成粉末氧化物而不是连续薄膜。R仅在低浓度下取决于气相中二酮酸酯的浓度，在较高浓度下是恒定的。讨论了有机金属化合物制备ZrO2和lifO2薄膜的最佳条件以及氧对R的影响。化学气相沉积（CVD）氧化物在制备固体器件和保护涂层薄膜方面的应用越来越广泛。对于所有这些应用，控制化学计量、结构、物理、机械和电性能是必不可少的。任何有关CVD机理或参数的知识都有助于设计控制这些关键特性的方法。锆和铪的对二酮酸配合物的热气相分解形成相应的氧化物已经在前面的论文中描述过（1,2）。本文详细介绍了薄膜的生长特性及其与实验条件的关系。
The preparation of thin films of zirconium oxide and hafnium oxide by decomposition of the diketonate complexes of these metals has been described in two earlier papers. The present paper deals with aspects of film growth. The rate of film growth (R) depends on the substrate temperature but as the temperature increases, powdery oxide forms rather than continuous film. R depends on the concentration of the diketonate in the gas phase only at low values of concentrations and is constant at higher concentrations. The optimal conditions for ZrO2 and lifO2 film deposition from organometallic compounds and the influence o~ oxygen on R are discussed.Chemical vapor deposition (CVD) of oxides finds increasing use in preparation of thin films for solidstate devices and protective coatings. For all these applications, control of stoichiometry, structure, physical, mechanical, and electrical properties is essential. Any knowledge of the mechanism or of the parameters involved in CVD is very helpful in de: vising means to control these critical properties. The thermal gas phase decomposition of p-diketonate complexes of zirconium and hafnium to form the corresponding oxides has been described in preceding papers (1, 2). The present paper describes details o~ the growth characteristics of thin films and their dependence on the experimental conditions.