Complete Strain Mapping of Nanosheets of Tantalum Disulfide.-猫眼课题宝

DOI：

10.1021/acsami.0c06517

发表时间：

2020-01

期刊：

ACS applied materials & interfaces

影响因子：

9.5

通讯作者：

中科院分区：

材料科学2区

文献类型：

作者：

Yue Cao;Tadesse A. Assefa;Soham Banerjee;A. Wieteska;Dennis Zi-Ren Wang;A. Pasupathy;X. Tong;Yu Liu;Wenjian Lu;Yuping Sun;Yan He;Xiaojing Huang;Hanfei Yan;Y. Chu;S. Billinge;I. Robinson

准二维（准2D）材料因其独特的能带结构而有望在未来的电子学中发挥作用，从而导致电子和机械性能对所有三个维度的晶体应变敏感。量化晶体应变是将其与器件性能相关联的先决条件，并且需要高分辨率但空间分辨的快速表征方法。在这里，我们表明，使用飞扫描纳米 X 射线衍射，我们可以在 1T-TaS2 的准二维薄片上实现低于 0.001% 的拉伸应变灵敏度，在 100 µm 的空间范围内空间分辨率优于 80 nm。通过扫描 12keV 聚焦 X 射线束并旋转样品，从约 100 nm 厚的 1T-TaS2 片上收集相干衍射图案。我们证明，样品中存在的微米和亚微米尺寸“气泡”周围的应变分布可以从这些图像中重建。这些实验使用最先进的同步加速器仪器，并将允许对基于准二维材料的薄膜样品和电子设备进行快速且非侵入式的应变测绘。

Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying crystal strain is a prerequisite to correlating it with the performance of the device, and calls for high resolution but spatially resolved rapid characterization methods. Here we show that using fly-scan nano X-ray diffraction we can accomplish a tensile strain sensitivity below 0.001% with a spatial resolution of better than 80 nm over a spatial extent of 100 µm on quasi 2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a ~100 nm thick sheet of 1T-TaS2 by scanning 12keV focused X-ray beam across and rotating the sample. We demonstrate that the strain distribution around micron and sub-micron sized 'bubbles' that are present in the sample may be reconstructed from these images. The experiments use state of the art synchrotron instrumentation, and will allow rapid and non-intrusive strain mapping of thin film samples and electronic devices based on quasi 2D materials.

Complete Strain Mapping of Nanosheets of Tantalum Disulfide.

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