Formation and Structure Analysis of Very Long ErSi2 Nanowires Formed on Si(110) Substrates
Formation and Structure Analysis of Very Long ErSi2 Nanowires Formed on Si(110) Substrates
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Si(110) 衬底上超长 ErSi2 纳米线的形成和结构分析
DOI：
10.1143/jjap.45.5535
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发表时间：
2006
影响因子：
1.5
通讯作者：
Xinwei Zhao
中科院分区：
文献类型：
--
作者：
R. Watanabe;S. Harako;T. Kuzuu;K. Kouno;Tomohiro Kobayashi;T. Meguro;Xinwei Zhao
采用自组装方法在Si（110）衬底上制备了很长的ErSi 2纳米线。线是高度平行的，并且在Si方向上生长<011>。制造了长度超过50 µm的纳米线。通过透射电子显微镜观察到，线是六方晶体类型，其c轴（<0001>方向）垂直于Si（112）面。然后将纳米线深埋在Si（110）表面。能量色散X射线光谱测量表明，纳米线具有ErSi2的化学组成。在高电阻率硅衬底上制备的纳米线的电导率测试表明，ErSi2纳米线在室温下是良好的导体。ErSi_2纳米线是一种很有前途的纳米互连材料。
Very long ErSi2 nanowires were formed on a Si(110) substrate by a self-assembly process. The wires were highly parallel and grew in the Si<011> direction. Nanowires with lengths more than 50 µm were fabricated. It was observed by transmission electron microscopy that the wires were hexagonal crystal type, having their c-axis (<0001> direction) perpendicular to the Si(112) plane. Then the nanowires were deeply buried in the Si(110) surface. Energy-dispersive X-ray spectroscopy measurements indicated that the nanowires had a ErSi2 chemical composition. Electrical conductivity measurement of the nanowires formed on high-resistivity Si substrates showed that the ErSi2 nanowires were good conductors at room temperature. The ErSi2 nanowire might be a promising candidate in nanometer-sized inter connection.