Gain Saturation in (In,Ga)N/GaN/(Al,Ga)N Laser Structures
Gain Saturation in (In,Ga)N/GaN/(Al,Ga)N Laser Structures
复制标题
(In,Ga)N/GaN/(Al,Ga)N 激光器结构中的增益饱和
DOI：
--
复制
发表时间：
2000
期刊：
影响因子：
--
通讯作者：
V. Härle
中科院分区：
文献类型：
--
作者：
P. Michler;O. Lange;Martin Vehse;J. Gutowski;S. Bader;B. Hahn;H. Lugauer;V. Härle
我们系统地研究了（in,Ga）N/GaN/(Al,Ga)N激光结构的光增益及其饱和度与光子能量、激发密度和量子阱数的关系。在准平稳条件下，采用变条纹长度法获得了光增益和光饱和度。不饱和增益因子随着激发功率的增加，即模态增益的增加而增加，并在略低于增益最大值的频谱位置的能量处达到最大值。在300 K时测量到高达40 dB的高不饱和增益因子。
We performed systematic studies of the optical gain and its saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures in dependence on photon energy, excitation density and number of quantum wells. The optical gain and its saturation were obtained by means of the variable stripe-length method under quasi-stationary conditions. The unsaturated gain factor increases with increasing excitation power, i.e increasing modal gain, and reaches its maximum at energies slightly below the spectral position of the gain maximum. High unsaturated gain factors of up to 40 dB at 300 K have been measured.