COSS Measurements for Superjunction MOSFETs : Limitations and Opportunities
COSS Measurements for Superjunction MOSFETs : Limitations and Opportunities
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超级结 MOSFET 的 COSS 测量：局限性和机遇
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通讯作者：
Jaume Roig
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作者：
G. Zulauf;Jaume Roig
输出电容的小信号测量（COSS）在功率半导体芯片中普遍存在，并确定功率转换器的关键特性。对于硅超结功率MOSFET（SJS），我们报告COSS测量有两个关键的异常：交流扰动频率的变化和直流扫描方向的滞后。使用混合模式的模拟，我们属性的频率偏移的基本SJ结构，并发现，直流滞后是由不均匀的耗尽前沿的电荷捕获。我们表明，COSS测量的SJS不准确的大信号操作的特点，低估了存储的能量高达四倍，并没有给出任何指示COSS损失。
Small-signal measurements of output capacitance (COSS) are ubiquitous in power semiconductor datasheets and determine critical features of power converters. For silicon superjunction power MOSFETs (SJs), we report COSS measurements with two key anomalies: variation with ac perturbation frequency and hysteresis with dc sweep direction. Using mixed-mode simulations, we attribute the frequency shift to the fundamental SJ structure and find that dc hysteresis is caused by charge trapping from uneven depletion fronts. We show that COSS measurements on SJs do not accurately characterize large-signal operation, underestimating stored energy by up to four times and giving no indication of COSS losses.