Towards functionality-enhanced devices: Controlling the modes of operation in three-independent-gate transistors
Towards functionality-enhanced devices: Controlling the modes of operation in three-independent-gate transistors
复制标题
迈向功能增强型器件：控制三独立栅极晶体管的工作模式
DOI：
10.1109/nmdc.2015.7439231
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
G. Micheli
中科院分区：
文献类型：
--
作者：
P. Gaillardon;Jian Zhang;M. D. Marchi;G. Micheli
在本文中，我们介绍了三独立门场效应晶体管（tigfet）可实现的不同工作模式，并报告了制造器件的结果，包括：(i)器件极性的动态重构；（ii）阈值电压的动态控制；(3)阈下坡度的动态控制。
In this paper, we introduce the different modes of operation achievable with Three-Independent-Gate Field-Effect Transistors (TIGFETs) and report results on fabricated devices including: (i) the dynamic reconfiguration of the device polarity; (ii) the dynamic control of the threshold voltage; and (iii) the dynamic control of the subthreshold slope.