Hydrogen gas sensing properties of MoS2/Si heterojunction
Hydrogen gas sensing properties of MoS2/Si heterojunction
复制标题
MoS2/Si异质结的氢气传感性能
DOI：
10.1016/j.snb.2015.01.129
复制
发表时间：
2015-05-01
影响因子：
8.4
通讯作者：
Zhang, Wanli
中科院分区：
文献类型：
--
作者：
Liu, Yunjie;Hao, Lanzhong;Zhang, Wanli
Molybdenum disulfide (MoS2) thin films were deposited on (1 0 0) Si substrates using magnetron sputtering technique and MoS2/Si heterojunctions were fabricated. X-ray diffraction patterns revealed that( 0 0 1) crystal orientation is preferable in the films. Atomic force microscopy illustrated that the surface of the film is composed of dense nano-level grains. The current-voltage characteristics of the heterojunctions were investigated. The results showed that the heterojunctions exhibited obvious sensing properties to hydrogen gas (H-2) at room temperature (RT) when reverse voltages were applied on the heterojunctions. The sensing performance was featured by a high sensitivity, fast response and recovery, as well as good reversibility, and stable steady states. The sensing mechanisms were discussed in terms of the energy-band structure of the MoS2/Si heterojunction. (C) 2015 Elsevier B.V. All rights reserved.
