Three-phase planar eutectic growth models for a ternary eutectic system
Three-phase planar eutectic growth models for a ternary eutectic system
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DOI：
10.2320/matertrans1989.40.665
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发表时间：
1999-07-01
期刊：
影响因子：
--
通讯作者：
Umeda, T
中科院分区：
文献类型：
--
作者：
Himemiya, T;Umeda, T
为了考虑三元共晶体系的相选择问题，推导了三相平面共晶生长的解析表达式，分别假设了规则型、棒状+六边形和半规则型。无论几何形状如何，都给出了过冷度与界面生长速率的平方根成正比，共晶间距与生长速率的平方根成反比的关系。这些生长模型中使用的参数是由材料的物理性质表示的。预测的结构类型和共晶间距与实验结果一致。
In order to consider a phase selection in a ternary eutectic system, analytical expressions for three-phase planar eutectic growth have been derived, assuming the geometries as regular, rod+hexagon and semi-regular types. Irrespective of geometries the relations that the undercooling is proportional to the square root of the growth rate of the interface and that the eutectic spacing is inversely proportional to the square root of the growth rate have been given. The parameters used in these growth models are expressed by the physical properties of materials. The predicted structure type and the eutectic spacing are consistent with the reported experimental results.