Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO(x)/ZnO(x)/TiN Memristive System.
Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO(x)/ZnO(x)/TiN Memristive System.
复制标题
Pt/HfOx/ZnOx/TiN 忆阻系统单个无机突触模拟的突触可塑性和学习行为
DOI：
10.1186/s11671-017-1847-9
复制
发表时间：
2017-12
影响因子：
--
通讯作者：
Wu D
中科院分区：
文献类型：
--
作者：
Wang LG;Zhang W;Chen Y;Cao YQ;Li AD;Wu D
本文采用热原子层沉积（TALD）和等离子体增强原子层沉积（PEALD）相结合的方法制备了一种结构简单的Pt/HfOx/ZnOx/TiN新型忆阻器。本文对Pt/HfOx/ZnOx/TiN忆阻系统的突触可塑性和学习行为进行了深入研究。通过在脉冲循环期间改变编程电压幅度来获得多级电阻状态。器件的电导可以在循环过程中连续增大或减小，并具有较好的耐久性，最高可达3 × 103次循环。几个基本的突触功能同时实现在这样一个单一的双层HfOx/ZnOx设备，包括非线性传输特性，如长期可塑性（LTP），短期可塑性（STP），和尖峰定时依赖的可塑性。在Pt/HfOx/ZnOx/TiN忆阻器件中证实了重复脉冲刺激诱导的STP向LTP的转变。综上所述，采用ALD技术制备的Pt/HfOx/ZnOx/TiN结构简单，是一种在人工神经网络中有应用前景的忆阻器件。
In this work, a kind of new memristor with the simple structure of Pt/HfOx/ZnOx/TiN was fabricated completely via combination of thermal-atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). The synaptic plasticity and learning behaviors of Pt/HfOx/ZnOx/TiN memristive system have been investigated deeply. Multilevel resistance states are obtained by varying the programming voltage amplitudes during the pulse cycling. The device conductance can be continuously increased or decreased from cycle to cycle with better endurance characteristics up to about 3 × 103cycles. Several essential synaptic functions are simultaneously achieved in such a single double-layer of HfOx/ZnOxdevice, including nonlinear transmission properties, such as long-term plasticity (LTP), short-term plasticity (STP), and spike-timing-dependent plasticity. The transformation from STP to LTP induced by repetitive pulse stimulation is confirmed in Pt/HfOx/ZnOx/TiN memristive device. Above all, simple structure of Pt/HfOx/ZnOx/TiN by ALD technique is a kind of promising memristor device for applications in artificial neural network.