Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires
Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires
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一维过渡金属碲化物纳米线的晶圆级生长
DOI：
10.1021/acs.nanolett.0c03456
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发表时间：
2020
期刊：
影响因子：
10.8
通讯作者：
Miyata Yasumitsu
中科院分区：
文献类型：
--
作者：
Lim Hong En;Nakanishi Yusuke;Liu Zheng;Pu Jiang;Maruyama Mina;Endo Takahiko;Ando Chisato;Shimizu Hiroshi;Yanagi Kazuhiro;Okada Susumu;Takenobu Taishi;Miyata Yasumitsu
开发制备功能纳米材料的块体合成工艺对于基础和应用科学的进步至关重要。过渡金属硫化物(TMC)纳米线是具有三个原子直径和范德华表面的一维(1D)结构，已被报道具有一维金属性质，在电子和能源器件方面具有巨大的潜力。然而，它们的大规模生产仍然具有挑战性。在这里，我们用化学气相沉积的方法合成了高结晶度的过渡金属碲化物纳米线。本技术能够形成对准的原子薄的二维(2D)薄片或三维(3D)束的随机网络，两者都由单独的纳米线组成。这些纳米线表现出各向异性的一维光学响应和优异的导电性能。这些发现不仅为导电薄膜的可控和大规模合成提供了线索，而且为纳米线基二维和三维晶体的物理和器件应用研究提供了平台。
The development of bulk synthetic processes to prepare functional nanomaterials is crucial to achieve progress in fundamental and applied science. Transition-metal chalcogenide (TMC) nanowires, which are one-dimensional (1D) structures having three-atom diameters and van der Waals surfaces, have been reported to possess a 1D metallic nature with great potential in electronics and energy devices. However, their mass production remains challenging. Here, a wafer-scale synthesis of highly crystalline transition-metal telluride nanowires is demonstrated by chemical vapor deposition. The present technique enables formation of either aligned, atomically thin two-dimensional (2D) sheets or random networks of three-dimensional (3D) bundles, both composed of individual nanowires. These nanowires exhibit an anisotropic 1D optical response and superior conducting properties. The findings not only shed light on the controlled and large-scale synthesis of conductive thin films but also provide a platform for the study on physics and device applications of nanowire-based 2D and 3D crystals.