Determination of the basic device parameters of a GaAs MESFET
Determination of the basic device parameters of a GaAs MESFET
复制标题
GaAs MESFET 基本器件参数的确定
作者：
H. Fukui
本文介绍了一种测定金属半导体场效应晶体管(MESFET)有源沟道基本特性的新技术。有效栅长、沟道厚度和载流子浓度由直流参数决定。给出了一种精确测量直流参数的方法。这些新技术是使用各种样品设备进行演示的。直流参数能很好地预测微波性能参数，如最大输出功率和最小噪声系数。根据器件的几何和材料参数建立的简单解析表达式，计算的本征和非本征直流参数与实测值非常吻合。这些表达式可作为器件设计的基础。
This paper describes a new technique to determine the basic properties of the active channel of a gallium arsenide (GaAs) metal-semiconductor field effect transistor (mesfet). The effective gate length, channel thickness, and carrier concentration are determined from dc parameters. A precise method of measuring the dc parameters is also given. The new techniques are demonstrated using a wide variety of sample devices. It is also shown that microwave performance parameters, such as the maximum output power and minimum noise figure, are well predicted by dc parameters. Calculated values of the intrinsic and extrinsic dc parameters, using simple analytical expressions developed in terms of the geometrical and material parameters of a device, are shown to be in excellent agreement with their measured values. These expressions can be used as a basis for device design.