Non-equilibrium GaNAs Alloys with Band Gap Ranging from 0.8-3.4 eV
Non-equilibrium GaNAs Alloys with Band Gap Ranging from 0.8-3.4 eV
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带隙范围为 0.8-3.4 eV 的非平衡 GaN 合金
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
F. Luckert
中科院分区：
文献类型：
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作者：
K. Yu;S. Novikov;R. Broesler;C. R. Staddon;M. Hawkridge;Z. Liliental;I. Demchenko;J. Denlinger;V. M. Kao;F. Luckert
摘要: 采用非平衡低温分子束外延方法成功合成了一种新型合金体系——全成分范围的GaN(sub 1-x)As(sub x)合金。合金在 0.17 x 0.75 的成分范围内为非晶态，在此区域之外为晶态。非晶薄膜具有光滑的形态、均匀的成分和清晰、明确的光学吸收边缘。带隙能量在很宽的能量范围内变化，从 GaN 的 3.4 eV 到 x0.85 的 0.8 eV。带隙的减小主要归因于 x 0.2 合金的导带向下移动，以及 x 0.2 合金的价带向上移动。
Abstract : A new alloy system, the GaN(sub 1-x)As(sub x) alloys in the whole composition range was successfully synthesized using the non-equilibrium low temperature molecular beam epitaxy method. The alloys are amorphous in the composition range of 0.17 x 0.75 and crystalline outside this region. The amorphous films have smooth morphology, homogeneous composition and sharp, well defined optical absorption edges. The bandgap energy varies in a broad energy range from 3.4 eV in GaN to0.8 eV at x0.85. The reduction of the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x 0.2, and to the upward movement of the valence band for alloys with x 0.2.