Morphological Effects in the Quantum Yield of Cesium Iodide
Morphological Effects in the Quantum Yield of Cesium Iodide
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DOI：
10.1016/0168-9002(95)00141-7
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发表时间：
1995-07
影响因子：
1.4
通讯作者：
J. Almeida;F. Barbò;M. Bertolo;A. Bianco;A. Braem;S. Cerasari;C. Coluzza;T. dell’Orto;S. Fontana;G. Margaritondo;E. Nappi;G. Paic;F. Piuz;R. Sanjinés;T. Scognetti;S. Sgobba
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文献类型：
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作者：
J. Almeida;F. Barbò;M. Bertolo;A. Bianco;A. Braem;S. Cerasari;C. Coluzza;T. dell’Orto;S. Fontana;G. Margaritondo;E. Nappi;G. Paic;F. Piuz;R. Sanjinés;T. Scognetti;S. Sgobba
我们证明，多晶碘化铯（CsI）的大面积Ni Au涂层的印刷电路板上提供的量子效率（QE）高出2倍，比标准的Cu Au印刷电路上沉积的薄膜。这是目前系统研究CsI在不同衬底上的QE横向不均匀性的最重要的结果。我们发现QE横向变化和薄膜的形态均匀性之间有很强的相关性。通过紫外光电子发射显微镜和空间分辨X射线光电子能谱测量QE，并通过二次电子显微镜、X射线衍射和扫描隧道显微镜进行形貌研究。
We demonstrated that polycrystalline cesium iodide (CsI) on large area Ni Au coated printed board provides a quantum efficiency (QE) higher by a factor of 2 than the films deposited on the standard Cu Au printed circuits. This is the most important result of the present systematic study of the QE lateral inhomogeneity for CsI on different substrates. We found a strong correlation between the QE lateral variation and the morphological homogeneity of the films. The QE was measured by UV photoelectron emission microscopy and spatially resolved X-ray photoemission, and the morphology studies were performed by secondary electron microscopy, X-ray diffraction and scanning tunneling microscopy.