Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy
Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy
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DOI：
10.1063/1.2738946
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发表时间：
2007-06-01
影响因子：
1.6
通讯作者：
Serrano, Justin R.
中科院分区：
文献类型：
--
作者：
Beechem, Thomas;Graham, Samuel;Serrano, Justin R.
拉曼斯托克斯峰位置及其位移的分析经常用于估计微电子和微机电系统设备中的温度或应力。然而，如果两个场同时演变，斯托克斯位移代表这些效应的卷积，从而很难准确测量任一量。通过利用斯托克斯线宽与施加应力的相对独立性，可以将信号解卷积为温度和应力的估计。利用这一特性，提出了一种在掺杂多晶硅微加热器中同时测量温度和应力的方法。开发了一种数据收集和分析方法，以减少测量应力的不确定性，在 -325 MPa 的平均施加应力和 520 摄氏度的温度下，精度达到 +/- 40 MPa。测量结果与微型加热器的三维有限元分析进行了比较，结果显示非常一致。该分析表明拉曼光谱有潜力使用单一光学测量来测量设备中不断变化的温度和应力场。 (c) 2007 年美国物理研究所。
Analysis of the Raman Stokes peak position and its shift has been frequently used to estimate either temperature or stress in microelectronics and microelectromechanical system devices. However, if both fields are evolving simultaneously, the Stokes shift represents a convolution of these effects, making it difficult to measure either quantity accurately. By using the relative independence of the Stokes linewidth to applied stress, it is possible to deconvolve the signal into an estimation of both temperature and stress. Using this property, a method is presented whereby the temperature and stress were simultaneously measured in doped polysilicon microheaters. A data collection and analysis method was developed to reduce the uncertainty in the measured stresses resulting in an accuracy of +/- 40 MPa for an average applied stress of -325 MPa and temperature of 520 degrees C. Measurement results were compared to three-dimensional finite-element analysis of the microheaters and were shown to be in excellent agreement. This analysis shows that Raman spectroscopy has the potential to measure both evolving temperature and stress fields in devices using a single optical measurement. (c) 2007 American Institute of Physics.