Design, Simulation, Production and Initial Characterisation of 3D Silicon Detectors
Design, Simulation, Production and Initial Characterisation of 3D Silicon Detectors
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3D 硅探测器的设计、仿真、生产和初步表征
DOI：
10.1016/j.nima.2008.08.077
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发表时间：
2009
影响因子：
1.4
通讯作者：
C. Parkes
中科院分区：
文献类型：
--
作者：
D. Pennicard;G. Pellegrini;M. Lozano;C. Fleta;R. Bates;C. Parkes
3D探测器是具有穿过硅衬底的n型和p型电极列的光电二极管辐射探测器。这种结构使得可以在不减小敏感厚度的情况下实现非常小的电极间距。这大大降低了探测器的耗尽电压和收集时间，从而提高了其辐射硬度。这可能使3D探测器成为未来高亮度对撞机（如Super-LHC）的像素探测器。研究机构IMB-CNM（Centro Nacional de Microelectronica，Barcelona）已经生产了具有“双面3D”结构的3D垫、像素和条带探测器。这种制造已经在格拉斯哥大学与设计和模拟工作一起完成。全国有色金属委员会生产的第一批设备已成功通过IV和CV测试，源测试正在进行中。此外，本会议记录还讨论了其他3D探测器合作机构所做的工作：斯坦福大学、曼彻斯特大学和Sintef; FBK（特伦托）;以及格拉斯哥、钻石光源和IceMOS有限公司。
The 3D detectors are photodiode radiation detectors with n- and p-type electrode columns passing through a silicon substrate. This structure makes it possible to achieve a very small electrode spacing without reducing the sensitive thickness. This greatly reduces the detector's depletion voltage and collection time, and hence improves its radiation hardness. This could make 3D detectors useful as pixel detectors for future high-luminosity colliders, such as the Super-LHC. The research institute IMB-CNM (Centro Nacional de Microelectronica, Barcelona) have produced 3D pad, pixel and strip detectors with a “double-sided 3D” structure. This fabrication has been done alongside design and simulation work at the University of Glasgow. The first devices produced by CNM have been successfully IV and CV tested, and source tests are ongoing. Additionally, this conference record discusses work done by other 3D detector collaborations: Stanford, Manchester University and Sintef; FBK (Trento); and Glasgow, Diamond Light Source and IceMOS Ltd.