What Defines a Crystal Structure? Effects of Chalcogen Atoms in 3, <scp>7‐Bis</scp> (methylchalcogeno)benzo[1,2‐ <i>b</i> :4,5‐ <i>b</i> ′] <scp>dichalcogenophene‐Based</scp>
What Defines a Crystal Structure? Effects of Chalcogen Atoms in 3, <scp>7‐Bis</scp> (methylchalcogeno)benzo[1,2‐ <i>b</i> :4,5‐ <i>b</i> ′] <scp>dichalcogenophene‐Based</scp>
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什么定义了晶体结构? 3, <scp>7-Bis</scp> (甲基硫属元素)苯并[1,2- <i>b</i> :4,5- <i>b< /i> ′] <scp>基于二硫族基因酚</scp>
DOI:
10.1002/cjoc.202200302
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发表时间:
2022
影响因子:
5.4
通讯作者:
Kawabata Kohsuke
中科院分区:
文献类型:
--
作者:
Takimiya Kazuo;Bulgarevich Kirill;Sahara Kamon;Kanazawa Kiseki;Takenaka Hiroyuki;Kawabata Kohsuke
Comprehensive SummaryTo understand the effects of chalcogen atoms on the crystal structure of the series of 3,7‐bis(methylchalcogeno)benzo[1,2‐b:4,5‐b′]dichalcogenophene‐based organic semiconductors, three benzodifuran derivatives (1—3) and dimethoxy derivatives of benzodithiophene and benzodiselenophene (4and7) were newly synthesized to complete the “3 × 3 matrix” of the oxygen‐, sulfur‐, and selenium‐derivatives (1—9). The crystal structures of1—9were classified into four classes, sandwich pitched π‐stack (1), dimeric (2and3), pitched π‐stack (4,5,7,8,9), and brickwork structure (6and9). The causes for the different crystal structures depending on the chalcogen atoms were investigated by the theoretical calculations, indicating that the chalcogen atoms in the core and substituents primarily affected the packing structures. Although the crystal growth in the vapor phase afforded different polymorphs, the relationship between the crystal structure and the carrier transport property was carefully investigated. With these comprehensive evaluations, we conclude that; i) methylchalcogenolation is a powerful tool to alter the packing structure, ii) each methylchalcogeno group has its features that largely influence the intermolecular interaction and electronic structure in the solid state, and iii) organic semiconductors being crystallizable into appropriate pitched π‐stack structures are promising as high‐performance active materials for FET applications.