Selective-area and lateral overgrowth of chromium dioxide (CrO2) films by chemical vapor deposition
Selective-area and lateral overgrowth of chromium dioxide (CrO2) films by chemical vapor deposition
复制标题
DOI：
10.1063/1.125213
复制
发表时间：
1999-11-08
影响因子：
4
通讯作者：
Xiao, G
中科院分区：
文献类型：
--
作者：
Gupta, A;Li, XW;Xiao, G
选择性区域生长已用于利用 CrO3 前体的常压化学气相沉积在预图案化表面的特定区域沉积二氧化铬 (CrO2) 薄膜。对于沉积在覆盖有图案化 SiO2 薄膜的单晶 TiO2 衬底上的薄膜，外延生长选择性地发生在暴露于衬底的窗口中，而在被 SiO2 掩蔽的区域中没有沉积。基底为 CrO2 在图案化条纹窗口中的初始垂直生长提供了晶体学模板。随着薄膜厚度的增加，CrO2 的横向外延过度生长发生在掩模区域上，生长速率和刻面形成行为取决于条带开口的方向。多晶 CrO2 的选择性生长也已在氧化硅晶片上沉积的预图案化钛膜上实现。在这种情况下，钛膜在沉积之前被氧化，CrO2 的局部生长仅发生在氧化钛的顶部，而不是 SiO2 上。 (C) 1999 年美国物理研究所。 [S0003-6951(99)01242-5]。
Selective-area growth has been utilized to deposit chromium dioxide (CrO2) films in specific regions of a prepatterned surface using atmospheric pressure chemical vapor deposition from CrO3 precursor. For films deposited on single crystal TiO2 substrates covered with patterned SiO2 thin film, epitaxial growth occurs selectively in the windows exposed to the substrate with no deposition in the regions masked by SiO2. The substrate provides a crystallographic template for the initial vertical growth of CrO2 in the patterned stripe windows. With increasing film thickness, lateral epitaxial overgrowth of CrO2 takes place over the masked regions, with the growth rate and facet formation behavior dependent on the orientation of the stripe openings. Selective growth of polycrystalline CrO2 has also been achieved on prepatterned titanium films deposited on oxidized silicon wafers. In this case, the titanium film is oxidized prior to deposition, with localized growth of CrO2 occurring only on top of the oxidized titanium and not on the SiO2. (C) 1999 American Institute of Physics. [S0003-6951(99)01242-5].