Effect of rf bias on properties of amorphous silicon oxide films deposited by plasma enhanced chemical vapor deposition
Effect of rf bias on properties of amorphous silicon oxide films deposited by plasma enhanced chemical vapor deposition
复制标题
射频偏压对等离子体增强化学气相沉积非晶氧化硅薄膜性能的影响
DOI:
--
复制
发表时间:
2021
期刊:
影响因子:
--
通讯作者:
Masaharu Shiratani
中科院分区:
文献类型:
--
作者:
Akihiro Yamamoto;Kohei Abe;Iori Nagao;Michihiro Otaka;Daisuke Yamashita;Kunihiro Kamataki;Takamasa Okumura;Naho Itagaki;Kazunori Koga1;Masaharu Shiratani