Luminescence properties of Eu2+- and Ce3+-doped CaAl2S4 and application in white LEDs
Luminescence properties of Eu2+- and Ce3+-doped CaAl2S4 and application in white LEDs
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Eu2+和Ce3+掺杂CaAl2S4的发光特性及其在白光LED中的应用
DOI：
10.1016/j.jssc.2007.12.038
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发表时间：
2008-03
影响因子：
3.3
通讯作者：
Yuan, Haibin
中科院分区：
文献类型：
--
作者：
Yu, Ruijin;Su, Qiang;Zhang, Jianhui;Wang, Jing;Yuan, Haibin
采用传统固相反应法和真空密封石英坩埚法合成了Eu 2+和Ce 3+掺杂的CaAl 2S 4荧光粉。X射线衍射（XRD）结果表明，采用真空密封石英晶体制备的样品具有较好的结晶质量，Eu 2+离子的发射强度提高了1.7倍。采用CaAl 2S 4：Eu 2+与近紫外InGaN芯片（λem= 395 nm）相结合的方法，制备了高亮度的绿色LED。所制备的绿色LED对正向偏置电流的依赖性表明，它具有良好的色度稳定性和亮度饱和度，表明CaAl 2S 4：Eu 2+是一种很有前途的近紫外InGaN基LED绿色发光荧光粉。此外，通过漫反射光谱、光致发光激发和发射光谱、聚集猝灭光谱和衰减曲线等手段，系统地研究了CaAl_2S_4：Ce ~（3+）的光学性质。图形摘要：采用两种方法对比合成了Eu 2+和Ce 3+掺杂的CaAl 2S 4荧光粉。真空密封石英晶体法合成的样品中Eu ~（2+）离子的发射强度是传统固相反应法合成样品中Eu ~（2+）离子的1.7倍
The Eu2+-and Ce3+-doped CaAl2S4 phosphors were comparatively synthesized by conventional solid-state reaction and the evacuated sealed quartz ampoule. The X-ray diffraction (XRD) patterns show that the sample with better crystalline quality was prepared by the evacuated sealed quartz ampoule, resulting in the enhancement of the emission intensity of Eu2+ ion by a factor of 1.7. The intensive green LEDs were also fabricated by combining CaAl2S4: Eu2+ with near-ultraviolet InGaN chips (λem= 395 nm). The dependence of as-fabricated green LEDs on forward-bias currents shows that it presents good chromaticity stability and luminance saturation, indicating that CaAl2S4: Eu2+ is a promising green-emitting phosphor for a near-UV InGaN-based LED. In addition, the optical properties of CaAl2S4: Ce3+ were systematically investigated by means of diffuse reflectance, photoluminescence excitation and emission, concentrating quenching and the decay curve.-Graphical abstract: The Eu2+-and Ce3+-doped CaAl2S4 phosphors were comparatively synthesized by two methods. The emission intensity of Eu2+ ion in sample synthesized by the evacuated sealed quartz ampoule method is by a factor of 1.7 as strong as that of Eu2+ ion in sample prepared by the conventional solid-state reaction method
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影响因子：
4
作者：
Seok-Kyun Oh;Ho-Jun Song;Wol-Soo Kim;Hyung-Gon Kim;Choong-il Lee;T.-Y. Park;M. Jin;C. Yoon
通讯作者：
Seok-Kyun Oh;Ho-Jun Song;Wol-Soo Kim;Hyung-Gon Kim;Choong-il Lee;T.-Y. Park;M. Jin;C. Yoon
影响因子：
6.2
作者：
P. Benalloul;C. Barthou;J. Benoit
通讯作者：
P. Benalloul;C. Barthou;J. Benoit
影响因子：
1.5
作者：
N. Miura;M. Kawanishi;H. Matsumoto;R. Nakano
通讯作者：
N. Miura;M. Kawanishi;H. Matsumoto;R. Nakano
影响因子：
4
作者：
Jabbarov, RB;Chartier, C;Benalloul, P
通讯作者：
Benalloul, P
影响因子：
2.7
作者：
Dorenbos, P
通讯作者：
Dorenbos, P