Double-sided diffractive photo-mask for sub-500nm resolution proximity i-line mask-aligner lithography
Double-sided diffractive photo-mask for sub-500nm resolution proximity i-line mask-aligner lithography
复制标题
用于低于 500nm 分辨率的邻近 i 线掩模对准光刻的双面衍射光掩模
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
U. Zeitner
中科院分区：
文献类型：
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作者：
Y. Bourgin;T. Siefke;T. Käsebier;E. Kley;U. Zeitner
衍射掩模对准光刻能够通过使用非接触模式来印刷具有亚500纳米分辨率的结构。这需要在掩模对准器中使用专门设计的相位掩模和专用照明条件来获得最佳曝光条件，需要在光路中放置光谱滤光片和偏振器。我们在这里介绍掩模设计，其中包括光掩模顶部的偏振器和底部的衍射元件。这使得能够通过在接近曝光模式中使用经典的掩模对准器来印刷任意取向的高分辨率结构。
Diffractive mask-aligner lithography is capable to print structures that have a sub-500-nanometer resolution by using non-contact mode. This requires the use of specially designed phase-masks and dedicated illumination conditions in the Mask-Aligner to obtain the optimal exposure conditions, a spectral filter and a polarizer needs to be placed in the beam path. We introduce here mask designs that includes a polarizer on the top side of a photo-mask and a diffractive element on the bottom one. This enables printing of high resolution structures of arbitrary orientation by using a classical mask-aligner in proximity exposure mode.