Polarized emission characteristics of UV-LED with subwavelength grating

Polarized emission characteristics of UV-LED with subwavelength grating
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DOI:
10.7567/jjap.53.072101
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发表时间:
2014-06
影响因子:
1.5
通讯作者:
Y. Takashima;R. Shimizu;M. Haraguchi;Y. Naoi
Y. Takashima;R. Shimizu;M. Haraguchi;Y. Naoi
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Y. Takashima;R. Shimizu;M. Haraguchi;Y. Naoi

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研究了GaN基亚波长光栅(SWG)紫外发光二极管(UV-LED)的偏振发射。电致发光(EL)光谱表明,该UV-LED具有很高的偏振选择性,最高可达360 nm。从理论上考虑了波导区折射率的空间周期性所产生的布洛赫模,并通过对电磁场的时域有限差分计算,讨论了极化电致发光的特性。我们成功地论证了在c面蓝宝石上生长高偏振紫外光LED的可行性。
We investigated polarized emission from a GaN-based ultraviolet light-emitting diode (UV-LED) with a subwavelength grating (SWG) on the surface. The electroluminescence (EL) spectra showed that the UV-LED exhibits high polarization selectivity, as high as at a wavelength of 360 nm. The polarized EL characteristics were discussed by the theoretical consideration of Bloch modes resulting from the spatial periodicity of the refractive index in the SWG region and also by finite difference time domain calculations to explore the electromagnetic field. We succeeded in demonstrating the feasibility of a highly polarized UV-LED grown on c-plane sapphire.