Dependence of Curie Temperature on the Thickness of Epitaxial (Ga,Mn)As Film
Dependence of Curie Temperature on the Thickness of Epitaxial (Ga,Mn)As Film
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居里温度与外延(Ga,Mn)As薄膜厚度的关系
DOI：
10.1103/physrevb.66.233313
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发表时间：
2002
影响因子：
3.7
通讯作者：
P. Lindelof
中科院分区：
文献类型：
--
作者：
B. Sørensen;J. Sadowski;S. Andresen;P. Lindelof
我们提出了非常薄（5-15 nm）的单一（Ga，Mn）As层的低温分子束外延生长的磁输运性质。一个较低的（Ga，Mn）As的铁磁相的厚度限制为5 nm，居里温度对（Ga，Mn）As厚度的依赖性确定从电输运测量。居里温度被确定为97 K的最薄的铁磁样品，并发现减少层厚度的增加。由霍尔测量确定，对于5 nm厚的（Ga，Mn）As层，载流子密度为7.1 × 10（20）cm（-3）。观察和讨论了厚层和薄层（Ga，Mn）As的磁输运性质之间的差异。
We present the magnetotransport properties of very thin (5-15 nm) single (Ga,Mn)As layers grown by low-temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the Curie temperature on (Ga,Mn)As thickness are determined from electrical-transport measurements. The Curie temperature is determined to be 97 K for the thinnest ferromagnetic sample and is found to decrease for increasing layer thickness. A carrier density of 7.1x10(20) cm(-3) for the 5 nm thick (Ga,Mn)As layer is determined from Hall measurements. Differences between magnetotransport properties of thick and thin (Ga,Mn)As layers are observed and discussed.