Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures
Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures
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DOI：
10.1063/1.98750
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发表时间：
1987-10
影响因子：
4
通讯作者：
G. Kothiyal;Songcheol Hong;N. Debbar;P. Bhattacharya;Jasprit Singh
中科院分区：
文献类型：
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作者：
G. Kothiyal;Songcheol Hong;N. Debbar;P. Bhattacharya;Jasprit Singh
在这封信中，我们给出了在GaAs衬底上生长的相干应变GaAsInGaAlAs多量子阱结构中激子跃迁的实验和理论结果。去掉衬底后的结构的吸收光谱显示出一个非常尖锐的激子峰，其吸收常数相当于晶格匹配的GaAs/AlGaAs系统的近两倍。理论计算表明，在去除衬底后，井区的双向拉伸应变导致了特定成分的四元合金的重空穴激子态和轻空穴激子态重合。对实验和理论进行了比较，并讨论了基于这一现象的器件的潜力。
In this letter we present experimental and theoretical results for excitonic transitions in coherently strained GaAs/InGaAlAs multiquantum well structures grown on a GaAs substrate. Absorption spectra of the structure with the substrate removed show an extremely sharp exciton peak with an absorption constant corresponding to nearly twice the value of that in the lattice‐matched GaAs/AlGaAs system. Theoretical calculations suggest that the biaxial tensile strain in the well region, occurring after the substrate is removed, causes the heavy‐hole and light‐hole exciton states to coincide for a specific composition of the quaternary alloy. A comparison between the experiments and theory is made and the potential for devices based on this phenomenon is discussed.