Heterointerface formation of aluminum selenide with silicon:: Electronic and atomic structure of Si(111):AlSe -: art. no. 195308
Heterointerface formation of aluminum selenide with silicon:: Electronic and atomic structure of Si(111):AlSe -: art. no. 195308
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DOI：
10.1103/physrevb.71.195308
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发表时间：
2005-05-01
影响因子：
3.7
通讯作者：
Olmstead, MA
中科院分区：
文献类型：
--
作者：
Adams, JA;Bostwick, A;Olmstead, MA
本文提出了一种新的、稳定的、不可重构的硅表面终端Si（111）：AlSe。当通过分子束外延在Si（111）上沉积倍半硒化铝（Al 2Se 3）时，该结构形成界面层。界面层的原子结构进行了研究，使用角分辨价和芯能级光电子能谱和衍射。Al 2Se 3/Si（111）界面形成类似于GaSe封端的Si的未重构的双层结构，其中Al直接位于顶部Si原子上方，Se位于中空位点上方，尽管双层形成的温度和Se从膜中再蒸发的温度对于AlSe比对于GaSe更高。此外，价带结构表明，铝硒双层电子钝化体硅，与所有的界面态位于体硅带内。
In this paper we present a new, stable, unreconstructed surface termination of silicon, Si(111):AlSe. The structure forms the interface layer when aluminum sesquiselenide (Al2Se3) is deposited on Si(111) by molecular beam epitaxy. The atomic structure of the interface layer was investigated using angle-resolved valence and core-level photoelectron spectroscopy and diffraction. The Al2Se3/Si(111) interface forms an unreconstructed bilayer structure similar to GaSe-terminated Si, with Al directly above the top Si atom and Se over the hollow site, although the temperatures for bilayer formation and for Se re-evaporation from the film are higher for AlSe than for GaSe. In addition, the valence band structure shows that the AlSe bilayer electronically passivates the bulk Si, with all interface states lying within the bulk Si bands.