Low cross-axis sensitivity micro-gravity microelectromechanical system sandwich capacitance accelerometer
Low cross-axis sensitivity micro-gravity microelectromechanical system sandwich capacitance accelerometer
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DOI：
10.1049/mnl.2011.0137
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发表时间：
2011-07-01
影响因子：
1.3
通讯作者：
Yang, Gang
中科院分区：
文献类型：
--
作者：
Hu, Qifang;Gao, Chengchen;Yang, Gang
本文介绍了一种采用双器件层绝缘体上硅（D-SOI）晶片的高度对称的微机电系统夹层加速度计的设计和实现。检测质量块由8根L形梁镜像对称悬挂。该悬挂系统提供了灵活的机械悬挂，而不需要大的芯片面积消耗。因此，加速度计不受感测电容和结构灵活性之间的权衡的影响。加速度计的感测模式（第一振动模式）成功地与随后的其他变化模式解耦。因此，加速度计对横向加速度和旋转扰动不敏感。采用各向异性湿法腐蚀和干法腐蚀相结合的工艺，从D-SOI晶片的两侧对称地制作对称梁-质量块结构。该加速度计具有55 pF/+/- 1 g的高开环电容灵敏度。闭环灵敏度为1.096v/g，交叉轴灵敏度为0.356%。加速度计的分辨率为4.167 μ g/pHz（0-200 Hz，1 atm）。
This Letter presents the design and implementation of a highly symmetric microelectromechanical system sandwich accelerometer using a double-device-layer silicon-on-insulator (D-SOI) wafer. The proof mass of though-wafer-thickness is suspended by eight L-shaped beams mirror-symmetrically. The suspension system provides flexible mechanical suspension without large chip area consumption. Therefore the accelerometer is immune from trade-off between sensing capacitance and structure flexibility. The sensing mode (first vibration mode) of the accelerometer is successfully decoupled from other variation modes that followed. Thereby, the accelerometer is insensitive to the lateral acceleration and the rotation disturbance. The symmetric beam-mass structure is fabricated from both sides of the D-SOI wafer symmetrically using a combination of anisotropic wet etching and dry etching process. The accelerometer has high opened-loop capacitance sensitivity of 55 pF/+/- 1 g. The closed-loop sensitivity is 1.096 v/g and the cross-axis sensitivity is 0.356%. The resolution of the accelerometer is 4.167 mu g/pHz (0-200 Hz at 1 atm).