Preparation and Properties of Lithium-doped K0.5Na0.5NbO3 Thin Films by Chemical Solution Deposition
Preparation and Properties of Lithium-doped K0.5Na0.5NbO3 Thin Films by Chemical Solution Deposition
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化学溶液沉积锂掺杂K0.5Na0.5NbO3薄膜的制备及性能
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
T. Hayashi
中科院分区：
文献类型：
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作者：
H. Maiwa;T. Kogure;K. Ishizaka;T. Hayashi
采用化学溶液沉积法在 Pt/TiO2/SiO2/Si 衬底上制备了锂掺杂 K0.5Na0.5NbO3 薄膜。通过控制起始金属醇盐的反应制备均匀且稳定的前体溶液。在 Pt/TiOx/SiO2/Si 基底上成功合成了钙钛矿 KNN 单相薄膜。在650℃退火的1.2微米厚的KLNN薄膜在-250℃表现出铁电极化磁滞回线。室温下的环路呈圆形，表明薄膜含有泄漏成分。室温下零偏压下的介电常数为490。在室温下，KLNN 薄膜电容器获得了典型的倒蝶形直流偏置电容曲线，表明所获得的 KLNN 薄膜中发生了极化反转。
Lithium doped K0.5Na0.5NbO3 films were fabricated by chemical solution deposition on Pt/TiO2/SiO2/Si substrates. Homogeneous and stable precursor solutions were prepared by controlling the reaction of starting metal alkoxides. Perovskite KNN single phase thin films were successfully synthesized on Pt/TiOx/SiO2/Si substrates. The 1.2 mum-thick KLNN film annealed at 650degC exhibited a ferroelectric polarization hysteresis loops at -250degC. The loop at room temperature is round in shape indicating the film contains leakage components. Dielectric constant under zero bias is 490 at room temperature. Typical upside-down butterfly DC bias-capacitance curve was obtained in the KLNN film capacitors at room temperature, indicating polarization reversal occurs in the obtained KLNN films.