Effects of Charge Trapping at the MoS2-SiO2Interface on the Stability of Subthreshold Swing of MoS2Field Effect Transistors
Effects of Charge Trapping at the MoS2-SiO2Interface on the Stability of Subthreshold Swing of MoS2Field Effect Transistors
复制标题
MoS2-SiO(2)界面电荷俘获对MoS(2)场效应晶体管亚阈值摆幅稳定性的影响
DOI：
10.3390/ma13132896
复制
发表时间：
2020-07-01
期刊：
影响因子：
3.4
通讯作者：
Jin, Zhi
中科院分区：
文献类型：
--
作者：
Huang, Xinnan;Yao, Yao;Jin, Zhi
亚阈值摆幅（SS）的稳定性对于逻辑电路中的开关和存储器应用非常重要。当栅电压扫描范围向负方向扩展时，MOS（2）场效应晶体管（FET）中的SS增大。这与其他报道的MoS 2FET完全不同，其他报道的MoS 2FET在改变栅极电压扫描范围时SS几乎恒定。这种反常的SS增大可归因于MoS_2-SiO（2）界面处的界面态。此外，我们还发现SS偏离了它与温度的线性关系，这与界面态的能量分布和热激活引起的费米能级移动有关。本文的研究对今后MoS_2场效应晶体管在低功耗器件和电路中的应用具有一定的指导意义。
The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS(2)field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different from other reported MoS2FETs whose SS is almost constant while varying gate voltage sweep range. This anomalous SS enlargement can be attributed to interface states at the MoS2-SiO(2)interface. Moreover, a deviation of SS from its linear relationship with temperature is found. We relate this deviation to two main reasons, the energetic distribution of interface states and Fermi level shift originated from the thermal activation. Our study may be helpful for the future modification of the MoS2FET that is applied in the low power consumption devices and circuits.