Gate-tunable Casimir equilibria with transparent conductive oxides
Gate-tunable Casimir equilibria with transparent conductive oxides
复制标题
具有透明导电氧化物的栅极可调卡西米尔平衡
DOI：
10.1103/physrevb.102.075428
复制
发表时间：
2020-08-12
影响因子：
3.7
通讯作者：
Gong, Ke
中科院分区：
文献类型：
--
作者：
Ge, Lixin;Shi, Xi;Gong, Ke
由于Casimir力的作用，对微小颗粒的主动控制在非接触、低摩擦的微纳机电系统(MEMS和NEMS)中具有重要意义。在这项工作中，我们从理论上研究了浸没在液体环境中的纳米板与金属氧化物半导体(MOS)衬底之间的Casimir力。该MOS结构由ITO/Teflon/Au层组成，其中栅电极连接在ITO膜和金衬底之间。我们的结果表明，Casimir平衡不仅取决于MOS结构中的层厚度，还取决于ITO(栅极可控)的载流子密度。在适当的条件下，由于Casimir力的作用，金纳米板可以稳定地被捕获。此外，我们还表明，通过降低ITO有源层中的载流子浓度，例如从10(21)cm(-3)到10(19)cm(-3)，可以释放陷阱态。还演示了悬浮聚四氟乙烯纳米板在稳定捕获和释放状态之间的转换。我们的发现对设计应用于MEMS/NEMS的超快可切换器件具有一定的参考价值。
The active control of small particles due to the Casimir force is of great interest for noncontact and low-friction micro- and nanoelectromechanical systems (MEMS and NEMS). In this work, we study theoretically the Casimir force between a nanoplate and a metal-oxide-semiconductor (MOS) substrate immersed in a liquid environment. The MOS structure consists of layers indium-tin-oxide (ITO)/Teflon/Au, where a gate electrode is connected between the ITO film and the gold substrate. Our results suggest that the Casimir equilibria are determined, not only by the layer thicknesses in MOS structures but also by the carrier densities of ITO (gate-controllable). Under proper conditions, a gold nanoplate can be stably trapped due to the Casimir forces. Moreover, we show that the trapping state can be released by decreasing the carrier density in the active layer of ITO, e.g., from 10(21) to 10(19) cm(-3). The switching between stable trapping and the release state of a suspended Teflon nanoplate is also demonstrated. Our findings can be useful in designing ultrafast switchable devices for applications in MEMS/NEMS.