Interpolating semiconductor alloy parameters: Application to quaternary III-V band gaps
Interpolating semiconductor alloy parameters: Application to quaternary III-V band gaps
复制标题
插值半导体合金参数：在四元 III-V 带隙中的应用
DOI：
10.1063/1.1613371
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发表时间：
2003
影响因子：
3.2
通讯作者：
K. Malloy
中科院分区：
文献类型：
--
作者：
G. P. Donati;R. Kaspi;K. Malloy
我们提出了一个合理化的双二次插值算法计算四元半导体参数，并将其应用于确定带隙的AlGaInAs，AlGaInP，AlInAsSb，GaInPAs，和GaInAsSb在完整的组成范围。扩展到包括双三次校正和五元合金进行了讨论。报道了晶格匹配的AlGaInAsSb和AlGaInPAs的带隙。
We present a rationalized biquadratic interpolation algorithm for calculating quaternary semiconductor parameters and apply it to determine the band gaps of AlGaInAs, AlGaInP, AlInAsSb, GaInPAs, and GaInAsSb over complete compositional ranges. Extension to include bicubic corrections and quinary alloys are discussed. The band gaps of lattice-matched AlGaInAsSb and AlGaInPAs are reported.