3D integration technology for sensor application using less than 5μm-pitch gold cone-bump connpdfection
3D integration technology for sensor application using less than 5μm-pitch gold cone-bump connpdfection
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DOI：
10.1088/1748-0221/10/03/c03004
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发表时间：
2015-03-01
影响因子：
1.3
通讯作者：
Arai, Y.
中科院分区：
文献类型：
--
作者：
Motoyoshi, M.;Miyoshi, T.;Arai, Y.
三维(3D)集成电路(IC)技术是降低先进的二维(2D)大规模集成电路(LSI)制造成本的有效解决方案，同时确保同等的器件性能和功能。这项技术允许使用堆叠的探测器/传感器器件的新设备架构，该器件具有较小的死区和促进超并行数据处理的高速操作。在像素探测器或焦平面传感器设备中，每个像素区域必须在不增加像素大小的情况下容纳许多晶体管。因此，许多实现3D-LSI器件的方法都被开发出来，以满足这一要求，通过关注3D-IC技术的单元工艺，例如通硅通孔形成和叠层之间的电气和机械键合。键合工艺包括几个单元工艺，如凸点或金属接触形成、芯片/晶片对准、芯片/晶片键合和底部填充形成；已有许多工艺组合的报道。我们的研究重点是在低于200℃的温度下实现硅大规模集成电路、化合物半导体和微电子机械系统器件的多功能键合技术，以实现异质集成。由纳米粒子沉积形成的金(Au)锥形凸块是很有希望实现这一目的的候选材料之一。本文介绍了3微米直径Au锥形凸台用粘结剂注射连接的实验结果，并与铟微凸台(Mu-Bump)进行了比较。直径3亩的Au锥形凸块的阻力约为6欧加。我们还研究了凸点结产生的应力对MOS特性的影响。
Three-dimensional (3D) integrated circuit (IC) technology is an effective solution to reduce the manufacturing costs of advanced two-dimensional (2D) large-scale integration (LSI) while ensuring equivalent device performance and functionalities. This technology allows a new device architecture using stacked detector/sensor devices with a small dead sensor area and high-speed operation that facilitates hyper-parallel data processing. In pixel detectors or focal-plane sensor devices, each pixel area must accommodate many transistors without increasing the pixel size. Consequently, many methods to realize 3D-LSI devices have been developed to meet this requirement by focusing on the unit processes of 3D-IC technology, such as through-silicon via formation and electrical and mechanical bonding between tiers of the stack. The bonding process consists of several unit processes such as bump or metal contact formation, chip/wafer alignment, chip/wafer bonding, and underfill formation; many process combinations have been reported. Our research focuses on a versatile bonding technology for silicon LSI, compound semiconductor, and microelectromechanical system devices at temperatures of less than 200 degrees C for heterogeneous integration. A gold (Au) cone bump formed by nanoparticle deposition is one of the promising candidates for this purpose. This paper presents the experimental result of a fabricated prototype with 3-mu m-diameter Au cone-bump connections with adhesive injection, and compares it with that of an indium microbump (mu-bump). The resistance of the 3-mu m-diameter Au cone bump is approximately 6 Omega. We also investigated the influence of stress caused by the bump junction on the MOS characteristics.