Study of spin-orbit torque induced magnetization switching in synthetic antiferromagnet with ultrathin Ta spacer layer
Study of spin-orbit torque induced magnetization switching in synthetic antiferromagnet with ultrathin Ta spacer layer
复制标题
超薄 Ta 间隔层合成反铁磁体自旋轨道扭矩引起磁化翻转的研究
DOI：
10.1063/1.5045850
复制
发表时间：
2018
影响因子：
4
通讯作者：
Han X. F.
中科院分区：
文献类型：
--
作者：
Kong W. J.;Wan C. H.;Tao B. S.;Fang C.;Huang L.;Guo C. Y.;Irfan M.;Han X. F.
基于自旋-轨道力矩的磁性材料自旋操纵产生了有前途的磁存储器和逻辑器件家族。在合成的反铁磁结构CoFeB/Ta/CoFeB中，两层CoFeB层均表现出垂直各向异性，基于自旋-轨道矩和Ta层间交换耦合机制研究了磁化翻转过程.实现了面内电流驱动的磁化反转。在5-10 mT的偏置磁场下，重金属Ta层虽然是致密的，但其临界电流密度为8 × 106-1 × 107 A/cm ~ 2。同时，利用谐波锁定技术确定了电流感应的类场和反阻尼场。谐波结果表明，类场场的产生效率是反阻尼类场的1.24倍。Ta层的有效自旋霍尔角约为-0.158。最后，我们研究了CoFeB层的磁性能随温度的变化，这表明底部和顶部CoFeB层的磁性能与界面质量和生长顺序密切相关，基于自旋轨道矩的磁性材料中的自旋操纵产生了有前途的磁存储器和逻辑器件家族。在合成的反铁磁结构CoFeB/Ta/CoFeB中，两层CoFeB层均表现出垂直各向异性，基于自旋-轨道矩和Ta层间交换耦合机制研究了磁化翻转过程.实现了面内电流驱动的磁化反转。在5-10 mT的偏置磁场下，重金属Ta层虽然是致密的，但其临界电流密度为8 × 106-1 × 107 A/cm ~ 2。同时，利用谐波锁定技术确定了电流感应的类场和反阻尼场。谐波结果表明，类场场的产生效率是反阻尼类场的1.24倍。Ta层的有效自旋霍尔角约为-0.158。最后，我们研究了作为滕佩的函数的CoFeB层的磁性。
Spin manipulation in magnetic materials based on spin-orbit torque gives rise to promising families of magnetic memory and logic devices. In the synthetic antiferromagnetic structure of CoFeB/Ta/CoFeB where both CoFeB layers exhibit perpendicular anisotropy, we study the magnetization switching process based on the mechanism of spin-orbit torque and interlayer exchange coupling mediated by a Ta layer. The magnetization switching trigged by in-plane current is achieved. Though the heavy metal Ta layer is ultrathin, the critical current density is 8 × 106–1 × 107 A/cm2 with a bias field of 5–10 mT. Meanwhile, the current induced anti-damping-like field and field-like field are determined by the harmonic lock-in technique. Harmonic results suggest that the generation efficiency of the field-like field is ∼1.24 times that of the anti-damping-like field. The effective spin Hall angle of a Ta layer is derived to be around −0.158. Finally, we examine the magnetic properties of CoFeB layers as a function of temperature which indicates that the magnetic properties of bottom and top CoFeB layers have a close correlation with the interface quality and growth order.Spin manipulation in magnetic materials based on spin-orbit torque gives rise to promising families of magnetic memory and logic devices. In the synthetic antiferromagnetic structure of CoFeB/Ta/CoFeB where both CoFeB layers exhibit perpendicular anisotropy, we study the magnetization switching process based on the mechanism of spin-orbit torque and interlayer exchange coupling mediated by a Ta layer. The magnetization switching trigged by in-plane current is achieved. Though the heavy metal Ta layer is ultrathin, the critical current density is 8 × 106–1 × 107 A/cm2 with a bias field of 5–10 mT. Meanwhile, the current induced anti-damping-like field and field-like field are determined by the harmonic lock-in technique. Harmonic results suggest that the generation efficiency of the field-like field is ∼1.24 times that of the anti-damping-like field. The effective spin Hall angle of a Ta layer is derived to be around −0.158. Finally, we examine the magnetic properties of CoFeB layers as a function of tempe...