Epsilon-Near-Zero Modes for Tailored Light-Matter Interaction
Epsilon-Near-Zero Modes for Tailored Light-Matter Interaction
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DOI：
10.1103/physrevapplied.4.044011
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发表时间：
2015-10-20
影响因子：
4.6
通讯作者：
Brener, Igal
中科院分区：
文献类型：
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作者：
Campione, Salvatore;Liu, Sheng;Brener, Igal
由声子和等离子体等凝聚态激发产生的Epsilon-近零模是在纳米尺度上定制光-物质相互作用的一条新途径。通过在纳米级半导体层中创建这样的模式，并控制它们与多个不同的偶极共振系统的相互作用，可以实现复杂的光谱整形。这种行为的例子出现在中红外频率的ENZ模，这些模与超材料谐振器强耦合，同时与半导体声子或量子井子带间跃迁(IST)强耦合，导致透射谱中的双极化子和三极化子分支。对于双极化子分支的情况，我们发现最大化拉比分裂的最佳策略是使用支持ENZ特征的掺杂层和支持IST的层的组合，并且具有重叠的ENZ和IST频率。这种设计灵活性使该平台成为低压可调滤光器、发光二极管和高效非线性复合材料的理想选择。
Epsilon-near-zero (ENZ) modes arising from condensed-matter excitations such as phonons and plasmons are a new path for tailoring light-matter interactions at the nanoscale. Complex spectral shaping can be achieved by creating such modes in nanoscale semiconductor layers and controlling their interaction with multiple, distinct, dipole resonant systems. Examples of this behavior are presented at midinfrared frequencies for ENZ modes that are strongly coupled to metamaterial resonators and simultaneously strongly coupled to semiconductor phonons or quantum-well intersubband transitions (ISTs), resulting in double-and triple-polariton branches in transmission spectra. For the double-polariton branch case, we find that the best strategy to maximize the Rabi splitting is to use a combination of a doped layer supporting an ENZ feature and a layer supporting ISTs, with overlapping ENZ and IST frequencies. This design flexibility renders this platform attractive for low-voltage tunable filters, light-emitting diodes, and efficient nonlinear composite materials.