Photochemical Etching of GaAs using Synchrotron Radiation
Photochemical Etching of GaAs using Synchrotron Radiation
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使用同步辐射对 GaAs 进行光化学蚀刻
DOI：
10.1143/jjap.29.l709
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
J. Chikawa
中科院分区：
文献类型：
--
作者：
S. Terakado;J. Nishino;M. Morigami;M. Harada;Shigeo Suzuki;Ken'ichiro Tanaka;J. Chikawa
使用同步辐射研究了氯对砷化镓的光化学蚀刻。当衬底温度高于25°C时，辐照区域和未辐照区域均被均匀蚀刻。在基板温度低于-25°C 的情况下，在照射区域观察到高选择性蚀刻。我们认为，在低温下，气相激发引起的蚀刻反应受到抑制，光化学表面反应占主导地位。
The photochemical etching of gallium arsenide by chlorine was investigated using synchrotron radiation. At the substrate temperatures above 25°C, both the irradiated and nonirradiated regions were uniformly etched. In case of substrate temperatures below -25°C, highly selective etching was observed in the irradiated region. We considered that at low temperatures, etching reaction caused by gas-phase excitation is suppressed and photochemical surface reaction becomes dominant.