High-temperature thermoelectric properties of Cu1-xInTe2 with a chalcopyrite structure
High-temperature thermoelectric properties of Cu1-xInTe2 with a chalcopyrite structure
复制标题
DOI：
10.1063/1.3678044
复制
发表时间：
2012-01-23
影响因子：
4
通讯作者：
Yamanaka, Shinsuke
中科院分区：
文献类型：
--
作者：
Kosuga, Atsuko;Plirdpring, Theerayuth;Yamanaka, Shinsuke
研究了Cu_（1-x）InTe_2（x=0，0.05，0.1，0.2）在310- 710 K的高温热电性能。该系统的电性能进行了优化的亚化学计量量的铜和额外的声子散射晶格缺陷和第二相的存在下，降低了系统的热导率。Cu_（1-x）InTe_（2-x）（x=0，0.05，0.1，0.2）样品在710 K下的无量纲优值均超过0.5，x=0.1时的最大值为0.54。(C)2012年美国物理学会。[doi 10.1063/1.3678044]
We investigated the high-temperature thermoelectric properties of Cu1-xInTe2 (x=0, 0.05, 0.1, 0.2) at 310-710K. The electrical properties of this system were optimized by the presence of substoichiometric amounts of copper and additional phonon scattering by lattice defects and a secondary phase reduced the thermal conductivity of the system. The samples of Cu1-xInTe2 (x=0, 0.05, 0.1, 0.2) all had dimensionless figures of merit in excess of 0.5 at 710K with a maximum value of 0.54 for x=0.1. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678044]