The MOS System
The MOS System
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MOS系统
DOI：
10.1017/cbo9780511794490
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发表时间：
2014
影响因子：
3.1
通讯作者：
O. Engström
中科院分区：
文献类型：
--
作者：
O. Engström
这本详细和最新的现代MOS结构指南描述了在测量和改进晶体管通道的未来MOS系统控制方面的重要工具、尖端模型、新现象和当前挑战。从基础静电学出发，介绍理想的MOS系统、高k氧化物的物理和电学性质、它们的介电常数以及对半导体和金属的能量偏置，然后继续介绍高k介电材料的电和物理表征方法。最后介绍了实际的MOS系统：高介电常数介质和中间层、声子动力学的影响、界面态和体陷阱、有效金属功函数、栅漏现象和高迁移率沟道材料。抽象概念得到了实际例子和批判性比较的支持，鼓励对工作原理的直观理解，并与最近的理论和实验结果一起展示，使其成为从事纳米电子学工作的研究人员、研究生和工业开发工程师的理想伴侣。
This detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.