Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum-well heterostructures
Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum-well heterostructures
复制标题
量子阱异质结构中准二维激子的局域化和均匀相相弛豫
DOI：
10.1103/physrevb.32.7013
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发表时间：
1985
影响因子：
3.7
通讯作者：
T. Takagahara
中科院分区：
文献类型：
--
作者：
T. Takagahara
The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum-well heterostructures are clarified for both localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth ${\ensuremath{\Gamma}}_{h}$ are explained quantitatively. Furthermore, a new exponent for the temperature dependence of ${\ensuremath{\Gamma}}_{h}$ of the localized excitons at low temperatures, the energy dependence of ${\ensuremath{\Gamma}}_{h}$ of the delocalized excitons, and the dependence of ${\ensuremath{\Gamma}}_{h}$ on the quantum-well thickness are predicted.
The mechanisms of dephasing relaxation (homogeneous linewidth) of quasi-two-dimensional excitons in quantum-well heterostructures are clarified for both localized and delocalized excitons. The recently observed energy and temperature dependences of the homogeneous linewidth ${\ensuremath{\Gamma}}_{h}$ are explained quantitatively. Furthermore, a new exponent for the temperature dependence of ${\ensuremath{\Gamma}}_{h}$ of the localized excitons at low temperatures, the energy dependence of ${\ensuremath{\Gamma}}_{h}$ of the delocalized excitons, and the dependence of ${\ensuremath{\Gamma}}_{h}$ on the quantum-well thickness are predicted.