A study of the interface and the related electronic properties in n-Al0.35Ga0.65N/GaN heterostructure
A study of the interface and the related electronic properties in n-Al0.35Ga0.65N/GaN heterostructure
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DOI：
10.1016/j.tsf.2005.06.017
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发表时间：
2005-11
期刊：
影响因子：
2.1
通讯作者：
Qinglin Zhang;Dejun Wang;Xiao Wei;T. Xie;Ziheng Li;Yanhong Lin;Min Yang
中科院分区：
文献类型：
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作者：
Qinglin Zhang;Dejun Wang;Xiao Wei;T. Xie;Ziheng Li;Yanhong Lin;Min Yang
n-Al0中的界面及相关电子性质。35 ga0。利用光谱和瞬态光电电压（PV）技术对65N/GaN异质结构进行了无损研究。在靠近衬底一侧的氮化镓缓冲层中观察到作为复合中心的缺陷水平。结果表明，由于二维电子气体的形成，3 μm的GaN层被完全耗尽。当样品的正面或背面以355nm的激光照射时，在GaN层中产生电子-空穴对，然后在GaN层中分离。在GaN层电场的作用下，空穴向衬底移动，电子向AlGaN/GaN界面移动。在正面光照下的PV瞬态中，分别观察到与电子-空穴对主动分离和由此产生的空穴漂移有关的快、慢分量。在较高的光照强度下，快速组分发生双分子重组，而在这段时间内，由于电子与空穴之间的距离较长，缓慢组分没有发生双分子重组
The interface and the related electronic properties in n-Al0. 35Ga0. 65N/GaN heterostructure were studied non-destructively by the spectral and transient photovoltage (PV) technique. A defect level as recombination center was observed in the buffer layer of GaN at the side close to the substrate. It was found that the GaN layer of 3 μm was completely depleted owing to the formation of two-dimensional electron gas. When the sample was illuminated at the front or the back side, with a laser radiation of 355 nm, the electron-hole pairs were generated in GaN layer and then separated there. By the action of the electric field in GaN layer, the holes moved to the substrate, while the electrons moved to the AlGaN/GaN interface. In the PV transients under the front illumination, a fast and a slow component, related to the initiative separation of the electron-hole pairs and the drift of the resultant holes, respectively, were observed. At higher illumination intensities, the bimolecular recombination happened to the fast component, while in that period of time it did not to the slow one owing to the long separation distance between the electrons and the holes