Conducting Al and Ga-doped zinc oxides; rapid optimisation and scale-up
Conducting Al and Ga-doped zinc oxides; rapid optimisation and scale-up
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DOI:
10.1039/c6ta03364d
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发表时间:
2016-01-01
影响因子:
11.9
通讯作者:
Darr, J. A.
中科院分区:
文献类型:
--
作者:
Howard, D. P.;Marchand, P.;Darr, J. A.
A high-throughput synthesis, screening and subsequent scale-up approach was utilised for the optimisation of conductive aluminium and gallium-doped zinc oxide (AZO and GZO, respectively) nanoparticles. AZO and GZO nanoparticles with up to 6 at% dopant (with respect to Zn) were directly synthesised using a laboratory scale continuous hydrothermal process at a rate of 60 g per hour. The resistivities were determined by Hall effect measurements on pressed, heat-treated discs. Both Al- and Ga-doping yielded resistivities of the order of 1 x 10(-2) Omega cm for most samples; the lowest resistivity of AZO was 7.0 x 10(-3) Omega cm (at 2.5 at% Al doping), and the lowest resistivity of GZO was 9.1 x 10(-3) U cm (at 3.5 at% Ga doping), which are considered exceptionally conductive for pressed nanopowders. Synthesis of the optimised lab-scale compositions was scaled-up using a pilot-scale continuous hydrothermal process at a production rate of 8 kg per day (by dry mass); results obtained from these nanopowders generally retained resistivity trends observed for the lab-scale analogues.