Conducting Al and Ga-doped zinc oxides; rapid optimisation and scale-up

Conducting Al and Ga-doped zinc oxides; rapid optimisation and scale-up
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DOI:
10.1039/c6ta03364d
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发表时间:
2016-01-01
影响因子:
11.9
通讯作者:
Darr, J. A.
Darr, J. A.
中科院分区:
材料科学2区
文献类型:
--
作者:
Howard, D. P.;Marchand, P.;Darr, J. A.

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一个高通量的合成,筛选和随后的规模扩大的方法被用于优化导电铝和镓掺杂的氧化锌(AZO和GZO,分别)纳米粒子。使用实验室规模的连续水热工艺以60 g/小时的速率直接合成具有至多6 at%掺杂剂(相对于Zn)的AZO和GZO纳米颗粒。通过对压制的、热处理的盘进行霍尔效应测量来确定双折射率。对于大多数样品,Al和Ga掺杂都产生了1 × 10(-2)Ω cm量级的电阻率; AZO的最低电阻率为7.0 × 10(-3)Ω cm(在2.5at% Al掺杂时),GZO的最低电阻率为9.1 × 10(-3)U cm(在3.5at% Ga掺杂时),这被认为是压制纳米粉末的异常导电性。优化的实验室规模的组合物的合成使用中试规模的连续水热工艺以每天8 kg(以干质量计)的生产速率按比例放大;从这些纳米粉末获得的结果通常保留了针对实验室规模的类似物观察到的电阻率趋势。
A high-throughput synthesis, screening and subsequent scale-up approach was utilised for the optimisation of conductive aluminium and gallium-doped zinc oxide (AZO and GZO, respectively) nanoparticles. AZO and GZO nanoparticles with up to 6 at% dopant (with respect to Zn) were directly synthesised using a laboratory scale continuous hydrothermal process at a rate of 60 g per hour. The resistivities were determined by Hall effect measurements on pressed, heat-treated discs. Both Al- and Ga-doping yielded resistivities of the order of 1 x 10(-2) Omega cm for most samples; the lowest resistivity of AZO was 7.0 x 10(-3) Omega cm (at 2.5 at% Al doping), and the lowest resistivity of GZO was 9.1 x 10(-3) U cm (at 3.5 at% Ga doping), which are considered exceptionally conductive for pressed nanopowders. Synthesis of the optimised lab-scale compositions was scaled-up using a pilot-scale continuous hydrothermal process at a production rate of 8 kg per day (by dry mass); results obtained from these nanopowders generally retained resistivity trends observed for the lab-scale analogues.