Electrical Input Structures for Nanomagnetic Logic Devices
Electrical Input Structures for Nanomagnetic Logic Devices
复制标题
纳米磁性逻辑器件的电输入结构
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
M. Becherer
中科院分区：
文献类型：
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作者：
J. Kiermaier;S. Breitkreutz;G. Csaba;D. Schmitt;M. Becherer
提出了一种靠近电流驱动线的钴/铂纳米磁体作为纳米磁逻辑的电输入接口。它们的切换场与外加磁场扫描速度和温度有很大的相关性，可以用校准的SharRock公式来模拟，实现了在µS时间尺度上的矫顽力外推。导线中电流脉冲的影响被模拟为产生的Oersted场和结构中的附加温升。该模型用于模拟足以控制输入磁体的电流脉冲特性。Oersted开关实验验证了所提出的模型，可视化了导线附近的受控纳米磁体，从而演示了输入设备的功能。
Co/Pt nanomagnets close to a current driven wire are proposed as an electrical input interface for nanomagnetic logic. Their switching field shows a significant dependence of the external magnetic field sweep rate and the temperature, which can be modeled by the calibrated Sharrock formula, realizing coercivity extrapolations in the µs time scale. The influence of the current pulse in the wire is modeled as a generated Oersted field and an additional temperature rise in the structure. The models are used to simulate the current pulse characteristics sufficient to control the input magnet. Oersted switching experiments verify the proposed modeling, visualize controlled nanomagnets in close vicinity of the wire and thereby demonstrate the functionality of the input device.