Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers
Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers
复制标题
使用薄原子层沉积层将铝触点与 n 型锗进行费米能级脱钉
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
D. McNeill
中科院分区：
文献类型：
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作者：
D. Gajula;P. Baine;M. Modreanu;P. Hurley;B. Armstrong;D. McNeill
通过原子层沉积的方法插入薄的界面介质，减少了铝在n型锗(n-Ge)上的费米能级钉扎。对于较薄的Al_2O_3界面层(∼_2·8 nm)，n-Ge上铝接触势垒高度从0·7 eV降至0·28 eV。对于具有Al_2O_3界面层的二极管，当界面层厚度大于2.8 nm时，接触电阻开始增大。对于具有HfO2界面层的二极管，当界面层厚度大于1.5 nm时，势垒高度也减小，但接触电阻显著增加。
Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al2O3 interfacial layer (∼2.8 nm). For diodes with an Al2O3 interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO2 interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.