Preparation of transparent and conductive In2O3–ZnO films by radio frequency magnetron sputtering
Preparation of transparent and conductive In2O3–ZnO films by radio frequency magnetron sputtering
复制标题
射频磁控溅射制备透明导电In2O3-ZnO薄膜
DOI：
10.1116/1.580323
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
S. Takata
中科院分区：
文献类型：
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作者：
T. Minami;Toshikazu Kakumu;S. Takata
以In2O3和ZnO为靶材，采用射频磁控溅射法制备了高透明导电的In2O3 - ZnO薄膜。采用Zn含量[Zn/(Zn+In)]约为10-60 at. %的靶材，在350℃的衬底温度下沉积了多晶Zn2In2O5薄膜。室温下沉积的Zn2In2O5薄膜在衬底表面的空间电阻率分布均匀。在350°C下沉积的Sn掺杂Zn2In2O5薄膜的电阻率为3.4×10−4 Ω cm。对于厚度约为20 nm的未掺杂Zn2In2O5薄膜，获得了400 Ω/sq的片电阻和90%以上的可见光平均透过率。以HCl为蚀刻剂时，In2O3-ZnO薄膜的蚀刻速率可由薄膜中Zn的含量控制。
Highly transparent and conductive In2O3–ZnO films have been prepared by rf magnetron sputtering using targets composed of In2O3 and ZnO. Polycrystalline Zn2In2O5 films were deposited at a substrate temperature of 350 °C using targets with a Zn content [Zn/(Zn+In)] of about 10–60 at. %. A uniform spatial resistivity distribution on the substrate surface was obtained even in Zn2In2O5 films deposited at room temperature. A resistivity of 3.4×10−4 Ω cm was obtained in Sn‐doped Zn2In2O5 films deposited at 350 °C. A sheet resistance of 400 Ω/sq and an average transmittance above 90% in the visible range were obtained for an undoped Zn2In2O5 film with a thickness of about 20 nm. The etching rate of In2O3–ZnO films when using HCl as the etchant could be controlled by the Zn content in the films.