Topological insulator nanostructures for near-infrared transparent flexible electrodes
Topological insulator nanostructures for near-infrared transparent flexible electrodes
复制标题
用于近红外透明柔性电极的拓扑绝缘体纳米结构
DOI：
10.1038/nchem.1277
复制
发表时间：
2012-04-01
期刊：
影响因子：
21.8
通讯作者：
Liu, Zhongfan
中科院分区：
文献类型：
--
作者：
Peng, Hailin;Dang, Wenhui;Liu, Zhongfan
拓扑绝缘体是一类有趣的材料，具有绝缘体态和无间隙的Dirac型边缘/表面态。最近的理论工作预测，少层拓扑绝缘体是宽带和高性能光电器件的有前途的候选人，由于其自旋动量锁定的无质量狄拉克边缘/表面状态，这是拓扑保护免受所有时间反演不变的扰动。在这里，我们首次实验演示了近红外透明柔性电极，该电极基于通过货车德瓦尔斯外延在云母衬底上外延生长的少层拓扑绝缘体Bi 2 Se 3纳米结构。大的，连续的，Bi 2Se 3-纳米片透明电极具有单一的狄拉克锥表面状态，并表现出薄层电阻低至类似于330 Ω/平方，在宽范围的波长的透明度超过70%。此外，Bi 2Se 3-纳米片透明电极显示出高的化学和热稳定性以及优异的机械耐久性，这可能导致具有独特性能的新型光电器件。
Topological insulators are an intriguing class of materials with an insulating bulk state and gapless Dirac-type edge/surface states. Recent theoretical work predicts that few-layer topological insulators are promising candidates for broadband and high-performance optoelectronic devices due to their spin-momentum-locked massless Dirac edge/surface states, which are topologically protected against all time-reversal-invariant perturbations. Here, we present the first experimental demonstration of near-infrared transparent flexible electrodes based on few-layer topological-insulator Bi2Se3 nanostructures epitaxially grown on mica substrates by means of van der Waals epitaxy. The large, continuous, Bi2Se3-nanosheet transparent electrodes have single Dirac cone surface states, and exhibit sheet resistances as low as similar to 330 Omega per square, with a transparency of more than 70% over a wide range of wavelengths. Furthermore, Bi2Se3-nanosheet transparent electrodes show high chemical and thermal stabilities as well as excellent mechanical durability, which may lead to novel optoelectronic devices with unique properties.