Characterization and application of electrodeposited Pt, Pt/Pd, and Pd catalyst structures for direct formic acid micro fuel cells
Characterization and application of electrodeposited Pt, Pt/Pd, and Pd catalyst structures for direct formic acid micro fuel cells
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DOI：
10.1016/j.electacta.2005.02.018
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发表时间：
2005-08-30
影响因子：
6.6
通讯作者：
Kenis, PJA
中科院分区：
文献类型：
--
作者：
Jayashree, RS;Spendelow, JS;Kenis, PJA
在这项工作中，我们研究了硅基甲酸微燃料电池中坚固的含铂和含钯催化剂结构的制备、结构表征和电催化分析。所研究的催化剂结构是通过后cmos兼容的电沉积工艺制备的，并结合到硅燃料电池中，而不是通过水墨画更常见地引入纳米颗粒催化剂。得到了坚固、高比表面积、由纯Pt、纯Pd组成且Pt/Pd = 1:1的催化剂结构。此外，在电沉积纯Pt结构上自发沉积得到了Pt/Pd催化剂结构。采用循环伏安法和计时电流法对催化剂结构进行了电化学表征。与纯Pt催化剂结构相比，所有含pd的催化剂结构都有利于甲酸在较低电位下氧化，并提供更高的氧化电流。这些催化剂结构的燃料电池表明，阳极上纯Pd催化剂结构的峰值功率密度最高，高达28.0 mW/cm(2)。本文提出的与MEMS兼容的催化剂电沉积和集成方法已经产生了对甲酸氧化具有高活性的催化剂结构，并且足够坚固，可以与后cmos处理兼容。(C) 2005 Elsevier Ltd版权所有。
In this work, we study the preparation, structural characterization, and electrocatalytic analysis of robust Pt and Pd-containing catalyst structures for silicon-based formic acid micro fuel cells. The catalyst structures studied were prepared and incorporated into the silicon fuel cells by a post CMOS-compatible process of electrodeposition, as opposed to the more common introduction of nanoparticle-based catalyst by ink painting. Robust, high surface area, catalyst structures consisting of pure Pt, pure Pd, and Pt/Pd = 1: 1 were obtained. In addition, Pt/Pd catalyst structures were obtained via spontaneous deposition on the electrodeposited pure Pt structure. The catalyst structures were characterized electrochemically using cyclic voltammetry and chronoamperometry. All Pd-containing catalyst structures facilitate formic acid oxidation at the lower potentials and deliver higher oxidation currents compared to pure Pt catalyst structures. Fuel cells of these catalyst structures show that pure Pd catalyst structures on the anode exhibit the highest peak power density, i.e. as high as 28.0 mW/cm(2). The MEMS compatible way of catalyst electrodeposition and integration presented here has yielded catalyst structures that are highly active towards formic acid oxidation and are sufficiently robust to be compatible with post-CMOS processing. (C) 2005 Elsevier Ltd. All rights reserved.