NATIVE-OXIDE REMOVAL ON SI SURFACES BY NF3-ADDED HYDROGEN AND WATER-VAPOR PLASMA DOWNSTREAM TREATMENT
NATIVE-OXIDE REMOVAL ON SI SURFACES BY NF3-ADDED HYDROGEN AND WATER-VAPOR PLASMA DOWNSTREAM TREATMENT
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DOI：
10.1143/jjap.33.2207
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发表时间：
1994-04-01
期刊：
影响因子：
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通讯作者：
YANO, H
中科院分区：
文献类型：
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作者：
KIKUCHI, J;IGA, M;YANO, H
将NF3注入氢气和水蒸气等离子体的下游，产生蚀刻物质而不产生氟原子，并去除在H2SO4/H2O2溶液中形成的Si(111)表面上的原生氧化物。通过分别使用单色仪和ESR光谱仪进行监测，确认等离子体和下游中不存在氟原子。因此，没有观察到导致颗粒产生的腔室石英表面的蚀刻。使用衰减全反射傅里叶变换红外（FT-IR ATR）光谱和 X 射线光电子能谱（XPS）对下游处理后的 Si 表面进行研究，并与 HF 湿法清洗后的表面进行比较。
NF3 was injected into the downstream of hydrogen and water vapor plasma to produce etching species without generating fluorine atoms, and native oxides on Si(111) surfaces formed in H2SO4/H2O2 solution were removed. The absence of fluorine atoms in the plasma and the downstream was confirmed by monitoring with a monochromator and an ESR spectrometer, respectively. Thus, etching of the quartz surface of a chamber which led to particle generation was not observed. The Si surfaces after the downstream treatment were investigated and compared with that after HF wet cleaning using attenuated total reflection Fourier transform infrared (FT-IR ATR) spectroscopy and X-ray photoelectron spectroscopy (XPS).