Programmable metallization cells based on amorphous La0.79Sr0.21MnO3 thin films for memory applications
Programmable metallization cells based on amorphous La0.79Sr0.21MnO3 thin films for memory applications
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DOI：
10.1016/j.jallcom.2013.06.095
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发表时间：
2013-12
影响因子：
6.2
通讯作者：
Dongqing Liu;Nan-nan Wang;Guang Wang;Zhengzheng Shao;Xuan Zhu;Chaoyang Zhang;Haifeng Cheng
中科院分区：
文献类型：
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作者：
Dongqing Liu;Nan-nan Wang;Guang Wang;Zhengzheng Shao;Xuan Zhu;Chaoyang Zhang;Haifeng Cheng
我们展示了一种基于非晶态La0.79Sr0.21MnO(a-LSMO)薄膜的新型可编程金属化单元，用于非挥发性存储。采用射频磁控溅射法在150℃的温度下在铂/钛/二氧化硅/硅衬底上制备了a-LSMO薄膜。Ag/a-LSMO/Pt电池表现出100次以上的可逆双极电阻转换，电阻比大于102，稳定保持时间大于104s。用阻抗谱分析了a-LSMO薄膜的导电机理，并用固体电解质a-LSMO薄膜中银丝的形成/断裂来解释电阻开关现象。
We demonstrated a new programmable metallization cell based on amorphous La0.79Sr0.21MnO3(a-LSMO) thin films for nonvolatile memory applications. The a-LSMO thin films were deposited on Pt/Ti/SiO2/Si substrates at 150 °C by radio frequency magnetron sputtering. The Ag/a-LSMO/Pt cell exhibited reversible bipolar resistive switching over 100 cycles with resistance ratio over 102and stable retention for over 104s. The impedance spectroscopy was used to analyze the conduction mechanism, and the resistive switching phenomena can be explained by the formation/rupture of Ag filaments in a-LSMO thin films utilized as solid electrolytes.