Inverse Anderson transition caused by flatbands.
Inverse Anderson transition caused by flatbands.
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DOI：
10.1103/physrevlett.96.126401
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发表时间：
2006-03
影响因子：
8.6
通讯作者：
M. Goda;S. Nishino;H. Matsuda
中科院分区：
文献类型：
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作者：
M. Goda;S. Nishino;H. Matsuda
我们提出了一种新的无序诱导的单电子态的绝缘体-金属跃迁，可称为“逆安德森跃迁”。“我们首先通过构建一个只具有平坦色散关系的三维周期系统来制作高度简并的局域态。当我们引入一个无序到它，一个有限大小的尺度的水平统计显示两个明确的（本地化-离域和离域-本地化）的能量范围很广的转变，随着无序程度的增加。这些转变也证实了通过找到系统的大小无关的波函数的特性。
We propose a new disorder-induced insulator-metal transition of one-electron states, which may be called the "inverse Anderson transition." We first make a highly degenerated localized states by constructing a three-dimensional periodic system possessing only flat dispersion relations. When we introduce a disorder into it, a finite-size scaling of the level statistics shows two clear (localization-delocalization and delocalization-localization) transitions for a wide range of the energy, with increasing the degree of disorder. These transitions are confirmed also by finding the system-size-independent characteristic of the wave function.