Photoluminescence properties of ZnO nanowire arrays fabricated on silicon substrate
Photoluminescence properties of ZnO nanowire arrays fabricated on silicon substrate
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DOI：
10.1109/nano.2013.6720841
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发表时间：
2013-08
期刊：
影响因子：
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通讯作者：
T. Ishiyama;T. Fujii;Y. Ishii;M. Fukuda
中科院分区：
文献类型：
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作者：
T. Ishiyama;T. Fujii;Y. Ishii;M. Fukuda
通过气-液-固生长技术在硅衬底上合成了单晶氧化锌（ZnO）纳米线阵列。研究了衬底温度和Ar气流量等生长条件对ZnO纳米线阵列生长性能的影响。使用扫描电子显微镜 (SEM)、X 射线衍射 (XRD) 和光致发光 (PL) 光谱进行结构和光学表征。 XRD测量表明单晶纳米线沿(002)方向生长。在不同 Ar 气体流量下生长的 ZnO 纳米线阵列的 SEM 图像表明，ZnO 纳米线的排列和结构特征受到气体流量的影响。 ZnO纳米线阵列的PL在380nm处表现出强紫外(UV)发射，在510nm附近表现出弱绿光发射。随着氩气流量的增加，观察到紫外发射的蓝移和展宽。
Arrays of single-crystal zinc oxide (ZnO) nanowires have been synthesized on silicon substrates by vapor-liquid-solid growth techniques. The effect of growth conditions including substrate temperature and Ar gas flow rate on growth properties of ZnO nanowire arrays were studied. Structural and optical characterization was performed using scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. The XRD measurements showed that the single crystal nanowires exhibited growth in the (002) direction. SEM images of the ZnO nanowire arrays grown at various Ar gas flow rates indicated that the alignment and structural features of ZnO nanowires were affected by the gas flow rate. The PL of the ZnO nanowire arrays exhibited strong ultraviolet (UV) emission at 380□nm and weak green emission around 510□nm. A blue shift and broadening of the UV emission was observed with an increment of Ar gas flow rate.