Influence of laser power on orientation, microstructure and electrical performance of YBa2Cu3O7−x film prepared on (001) SrTiO3 single crystal substrate by spray atomizing and coprecipitating laser chemical vapor deposition

Influence of laser power on orientation, microstructure and electrical performance of YBa2Cu3O7−x film prepared on (001) SrTiO3 single crystal substrate by spray atomizing and coprecipitating laser chemical vapor deposition
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激光功率对(001)SrTiO3单晶基片喷雾雾化共沉淀激光化学气相沉积YBa2Cu3O7−x薄膜取向、显微结构和电性能的影响

DOI:
10.1016/j.ceramint.2014.11.027
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发表时间:
2015
影响因子:
5.2
通讯作者:
Goto Takashi
Goto Takashi
中科院分区:
材料科学1区
文献类型:
--
作者:
P. Zhao;Ying Wang;Z. Huang;Yangwu Mao;Goto Takashi

文献摘要

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采用喷雾雾化共沉淀激光化学气相沉积法在(001)SrTiO 3单晶衬底上制备了YBa 2Cu 3 O 7 − x薄膜。在101-116 W的激光功率下(对应的沉积温度为893-942 K),制备了a轴取向的YBa 2Cu 3 O 7 − x薄膜,其外延生长模式为YBa 2Cu 3 O 7 −x[100]<$SrTiO3 [001](YBa 2Cu 3 O 7 −x[001]<$SrTiO3 [100])。a轴取向的YBa 2Cu 3 O 7 − x薄膜的临界温度为75-82 K,临界电流密度为0 - 0.4 MA cm−2。在激光功率为167-181 W(对应的沉积温度为1093-1154 K)时,获得了c轴取向的YBa 2Cu 3 O 7 − x薄膜,其外延生长模式为YBa 2Cu 3 O 7 −x[001]<$SrTiO3 [001](YBa 2Cu 3 O 7 −x[100]<$SrTiO3 [100])。在14 μm h− 1的沉积速率下制备的交流轴取向的YBa 2Cu 3 O 7 − x薄膜显示出91 K的高临界温度和2.8 MA cm−2的临界电流密度。
YBa2Cu3O7−xfilm was prepared on (001) SrTiO3single crystal substrate by spray atomizing and coprecipitating laser chemical vapor deposition. At laser power of 101–116 W (corresponding deposition temperature was 893–942 K),a-axis-oriented YBa2Cu3O7−xfilm was prepared, which showed an epitaxial growth mode of YBa2Cu3O7−x[100]‖SrTiO3[001] (YBa2Cu3O7−x[001]‖SrTiO3[100]). Thea-axis-oriented YBa2Cu3O7−xfilm had critical temperature of 75–82 K, with critical current density from 0 to 0.4 MA cm−2. At laser power of 167–181 W (corresponding deposition temperature was 1093–1154 K),c-axis-oriented YBa2Cu3O7−xfilm was obtained, whose epitaxial growth mode was YBa2Cu3O7−x[001]‖SrTiO3[001] (YBa2Cu3O7−x[100]‖SrTiO3[100]). Ac-axis-oriented YBa2Cu3O7−xfilm prepared at a deposition rate of 14 μm h−1showed a high critical temperature of 91 K and critical current density of 2.8 MA cm−2.
改善基于 IBAD 的 YBCO 涂层导体的空间均匀性
DOI: --
发表时间: 2008
期刊: Physica C 468
影响因子: --
作者:
Z. Zulkifli;et al.
通讯作者: et al.